PDF Download Semiconductor Power Devices: Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
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Semiconductor Power Devices: Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
PDF Download Semiconductor Power Devices: Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
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Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
- Sales Rank: #1803121 in Books
- Published on: 2011-01-25
- Original language: German
- Number of items: 1
- Dimensions: 6.14" h x 1.19" w x 9.21" l, 2.07 pounds
- Binding: Hardcover
- 536 pages
Review
Aus den Rezensionen:
“... Das Buch ist eine erweiterte, aktualisierte englische Version des deutschen Buchs der Autoren. Es präsentiert Leistungshalbleiter auf umfassender Weise ... Das Buch prasentiert auch diverse Störungen und Schwingungen, die durch Schaltvorgänge bei Leistungskomponenten verursacht werden. ... Die Lektüre schafft es, fundierte Theorie praxisnah und verständlich zu vermitteln. Ein gründliches, ausgewogenes Buch, das sowohl Energietechnik-Studierenden als auch Leistungselektronik-Entwicklungsingenieuren eine Fülle an wertvollen Informationen und Einsichten bietet.“ (in: Bulletin SEV/VSE, 7/October/2011, Issue 10, S. 68)
From the Back Cover
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
About the Author
Josef Lutz joined Semikron in Nuremberg, Germany, in 1983. First he worked in the development of GTO thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode, is holder of several patents regarding fast diodes, and has published more than 100 papers and conference contributions. In 1999 he received his Ph.D. in electrical engineering at the University of Ilmenau, Germany. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. He is member of the board of directors of the ZfM, of the International Steering Committee of the EPE, advisory board of the PCIM, of the program committee of the ISPS and CIPS. In 2005 he was awarded the rank of an honourable professor at the North Caucasus State Technical University in Stavropol. Uwe Scheuermann joined Semikron in Nuremberg, Germany, after completing his Ph.D. in semiconductor physics in 1990. After spending 5 years with the development of diode and thyristor chips, he changed his focus to the development of power modules. He has been involved in the development of the advanced power module families without base plates and the implementation of new packaging concepts like spring contacts. He has published more than 30 papers and holds several patents in the field of packaging technology. Today, he is at Semikron responsible for the reliability of components. He is a member of the board of directors of the PCIM Europe and of the program committee of the CIPS. Since 2006 he is engaged as an external lecturer at the Friedrich-Alexander-University of Erlangen. Rik De Doncker received his degree of Doctor in Electrical Engineering from the Katholieke Universiteit Leuven, Belgium in 1986. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. In 1988, he was employed as a General Electric Company fellow at the microelectronic center IMEC, Leuven, Belgium. In Dec. 1988, he joined the General Electric Company at the Corporate Research and Development Center, Schenectady, NY where he led research on drives and high power soft-switching converters, ranging from 100 kW to 4 MW, for aerospace, industrial and traction applications. In 1994 he joined Silicon Power Corporation (formerly GE-SPCO) as Vice President Technology where he worked on high power converter systems and MTO devices and was responsible for the development and production of world’s first 15 kV medium voltage transfer switch. Since Oct. 1996 he became professor at the RWTH-Aachen, where he leads the Institute für Stromrichtertechnik und Elektrische Antriebe (ISEA). In Oct. 2006 he became director of the E.ON Energy Research Center at RWTH Aachen University. Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster, in 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt. Working on operation principles of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analyzing device operation, he finds an important influence of exciton formation even near room temperature. A major point of his work was the development of device concepts such as the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the Technical University of Darmstadt. His results were published in many papers and conference reports.
Most helpful customer reviews
4 of 4 people found the following review helpful.
A look at a new text on power devices
By Phil Hower
Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker, Springer-Verlag, Berlin Heidelberg, 2011.
This is truly an excellent book. There is much here for those interested in power devices in general. Those with specific interests in power modules will find it even more rewarding. Written by four acknowledged experts, they have given us a text with fourteen chapters, and three appendices comprising 536 pages. As one might expect, silicon devices and technology dominate, but SiC devices are frequently mentioned and well described. Sentences are simple and direct to the point. Solid-state physics is available but not intimidating. TCAD is there, but also in non-overwhelming fashion. Relatively simple analytic equations are present throughout the book. The authors make good use of previously published papers, giving brief expositions of the important results for each paper. This is preferred, rather than just a reference citation. As the authors mention, much of the material was previously presented in classroom lectures. My view is that this "vetting" is beneficial and helps to improve overall understandability.
The introduction to each chapter typically has a brief historical description that is interwoven with an overview of the chapter's subject matter. An "Outlook" section concludes most chapters and gives possibilities for future development. These are welcome features not normally present in engineering texts.
There is also an especially well done chapter on packaging and reliability that answers many of the frequent questions that tend to arise on the packaging side. Many power packages are described. Transient thermal behavior of devices and packages is covered. The section on reliability is particularly helpful.
Perhaps the book's strongest chapters deal with diodes. There are four, counting an important chapter on destructive mechanisms. What might be called the German method of taking into account emitter recombination and behavior of the middle region is employed in the analysis of diode forward I-V characteristics. I've used most of the methods described in the pin diode chapter and found them to work well. Diode static and transient behavior is extensively covered. Diode failure modes are treated in detail. The reverse-recovery failure description provides a useful extension to the classic paper by Benda and Spenke.
Operation of the main component of the power module, the IGBT, is covered and its SOA and short circuit behavior discussed extensively in the chapter on device destruction. A major problem in the application of motor drives and power modules, power device induced oscillations, is given an entire chapter and discussed in detail.
What's not to like? Color would have been nice, but it's probably not quite ready for texts, maybe a future edition? Power integrated circuits are only briefly described. The one-dimensional thyristor turn-on model, for example from Dannhäuser and Voss, is not here. These are only quibbles. This is truly a great text and will be welcomed by the power device and power electronics communities.
3 of 4 people found the following review helpful.
Review for the textbook by Josef Lutz et.al.
By Dieter Silber, Institute for Electrical drives, power Electronics and Devices, University of Bremen
This book has been written by highly recognized experts in device development, device theory, device integration methods, and application aspects for power electronics. It covers all important types of semiconductor power devices, and it treats important aspects of reliability, robustness and EMI problems. For device specialists, it presents a really useful theoretical base, and for power electronics specialists, it contains the essential informations on device structures and properties.
Therefore I definitely recommend this book for all students and engineers involved in power electronics.
Prof. Dieter Silber
Institute for Electrical Drives, Power Electronics and Devices
University of Bremen
Germany
1 of 2 people found the following review helpful.
Best textbook
By Y. Sakiyama
I have been working in the high power semiconductor field for 15 years.
Now I want to encourage young engineers study high power semiconductor engineering.
This book covers all the topics from the traditional to the new ones.
I strongly recommend young engineers to buy a copy.
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